the information contained in this document is being issued in advance of the production cycle for the device. the parameters for the device may change before final production or nec corporation, at its own discretion, may withdraw the device prior to its production. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 2002 mos field effect transistor pa2705gr switching n-channel power mos fet preliminary product information document no. g16305ej1v0pm00 (1st edition) date published july 2002 ns cp(k) printed in japan description the pa2702gr is n-channel mos field effect transistor designed for dc/dc converters and power management applications of notebook computers. features ? low on-state resistance r ds(on)1 = 9.2 m ? max. (v gs = 10 v, i d = 7.0 a) r ds(on)2 = 14.8 m ? max. (v gs = 4.5 v, i d = 7.0 a) ? low c iss : c iss = 900 pf typ. (v ds = 10 v, v gs = 0 v) ? small and surface mount package (power sop8) ordering information part number package pa2705gr power sop8 absolute maximum ratings (t a = 25c, all terminals are connected.) drain to source voltage (v gs = 0 v) v dss 30 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) i d(dc) 13 a drain current (pulse) note1 i d(pulse) 52 a total power dissipation (t a = 25c) note2 p t 2.0 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c single avalanche current note3 i as 13 a single avalanche energy note3 e as 16.9 mj notes 1. pw 10 s, duty cycle 1% 2. mounted on ceramic substrate of 1200 mm 2 x 2.2 mm 3. starting t ch = 25c, v dd = 15 v, r g = 25 ? , l = 100 h, v gs = 20 0 v remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. package drawing (unit: mm) 1.27 0.12 m 6.0 0.3 4.4 0.40 +0.10 ?0.05 0.78 max. 0.05 min. 1.8 max. 1.44 0.8 0.5 0.2 0.15 +0.10 ?0.05 5.37 max. 0.10 14 85 1, 2, 3 ; source 4 ; gate 5, 6, 7, 8 ; drain equivalent circuit source body diode gate protection diode gate drain
preliminary product information g16305ej1v0pm 2 pa2705gr electrical characteristics (t a = 25c, all terminals are connected.) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 10 a gate leakage current i gss v gs = 20 v, v ds = 0 v 10 a gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.5 2.5 v forward transfer admittance | y fs |v ds = 10 v, i d = 7.0 a 7 13 s drain to source on-state resistance r ds(on)1 v gs = 10 v, i d = 7.0 a 7.3 9.2 m ? r ds(on)2 v gs = 4.5 v, i d = 7.0 a 11.1 14.8 m ? r ds(on)3 v gs = 4.0 v, i d = 7.0 a 12.7 17.0 m ? input capacitance c iss v ds = 10 v 900 pf output capacitance c oss v gs = 0 v 380 pf reverse transfer capacitance c rss f = 1 mhz 120 pf turn-on delay time t d(on) v dd = 15 v, i d = 7.0 a 9 ns rise time t r v gs = 10 v 5 ns turn-off delay time t d(off) r g = 10 ? 35 ns fall time t f 8ns total gate charge q g v dd = 15 v 9nc gate to source charge q gs v gs = 5 v 3nc gate to drain charge q gd i d = 13 a 4 nc body diode forward voltage v f(s-d) i f = 13 a, v gs = 0 v 0.82 1.2 v reverse recovery time t rr i f = 13 a, v gs = 0 v 28 ns reverse recovery charge q rr di/dt = 100 a/ s22nc test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 ? 50 ? d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 ? d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
preliminary product information g16305ej1v0pm 3 pa2705gr [memo]
pa2705gr ? the information contained in this document is being issued in advance of the production cycle for the device. the parameters for the device may change before final production or nec corporation, at its own discretion, may withdraw the device prior to its production. ? no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. ? nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, c opyrights or other intellectual property rights of nec corporation or others. ? descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. nec corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. ? while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. ? nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. m5 98. 8
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